PE2322A mosfet equivalent, n-channel enhancement mode power mosfet.
* VDS = 16V,ID = 6A RDS(ON) < 18mΩ @ VGS=4.5V RDS(ON) < 25mΩ @ VGS=2.5V
* High Power and current handing capability
* Lead free product is acquired
* Surf.
The PE2322A uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application.
GENERAL FEATURES
Image gallery
Download